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Nichrome Resistor Networks
on Silicon Substrates
S Series: SQSxxA 1 , SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB
Power Derating Curve & Package Power, Watts @ 7 0°C, Max. 4
QSOP
SOIC (Narrow)
SOIC (Wide)
P-DIP
16
0.6
20
0.7
24
0.8
8
0.4
14
0.7
16
0.8
16
1.0
20
1.2
24
1.2
8
0.4
14
0.6
16
0.8
Environmental (Mil-R-83401)
Thermal Shock plus Power Conditioning
Short Time Overload
Terminal Strength
Moisture Resistance
Mechanical Shock
Vibration
Low Temperature Operation
High Temperature Exposure
Resistance to Solder Heat
Marking Permanency
Flammability
Storage Temperature Range
Mechanical
Lead Plating
Lead Material
Lead Configuration
Lead Coplanarity
Substrate Material
Resistor Material
Body Material
4 Maximum power per resistor @ 70°C is 100 mW, not to exceed package power.
General Note
TT electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT electronics’ own data and is considered accurate at time of going to print.
Δ R 0.25%
Δ R 0.1%
Δ R 0.1%
Δ R 0.2%
Δ R 0.25%
Δ R 0.25%
Δ R 0.05%
Δ R 0.1%
Δ R 0.1%
Per MIL-STD-202, Method 215
UL-94V-0 Rated
-55°C to +125°C
100 matte Tin (RoHS)
Copper Alloy
Gull Wing
0.004” (0.102 mm)
Silicon
Passivated Nichrome
Molded Epoxy
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10.13
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